Abstract
A comprehensive study on bulk trap enhanced gate-induced drain leakage (BTE-GIDL) currents in high-MOSFETs is reported in this letter. The dependence of GIDL for various parameters, including the effect of Zr concentration in , high-film thickness, and electrical stress is investigated. The incorporation of Zr into reduces GIDL. GIDL was also found to reduce with thinner high-film. In addition, a significant correlation between GIDL and bulk trap density in high- film is established. Possible mechanisms were provided to explain the role of bulk trapping in BTE-GIDL, observed in high-devices.
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