Abstract
A numerical analysis has been performed utilizing Analysis of Microelectronic and Photonic Structures (AMPS 1D) simulator to explore the possibility of higher efficiency and stable Zn x Cd 1−x S/CdTe cells. Several cell structures with indium tin oxide (ITO) and cadmium stannate (Cd 2 SnO 4 ) as front contact, zinc stannate (Zn 2 SnO 4 ) and zinc oxide (ZnO) as buffer layer and antimony telluride (Sb 2 Te 3 ) insertion with Nickle (Ni) as back contact has been investigated in the conventional (SnO 2 /CdS/CdTe/Ag) CdTe cell structures in which CdS is replaced by zinc cadmium sulphide (Zn x Cd 1−x S) as window layer. Efficiency as high as 18.0% has been found with 80 nm of Zn x Cd 1−x S window layer for x=0.05, 1 µm of CdTe layer and 100 nm Zn 2 SnO 4 buffer layer without Sb 2 Te 3 back contact. However, ZnO insertion shows low conversion efficiency of 7.84% and 12.26%, respectively with and without Sb 2 Te 3 back contact. It has been found that 1 µm of CdTe absorber layer, 70 nm of Zn x Cd 1−x S (x=0.05) window layer, 100 nm of Zn 2 SnO 4 buffer layer and 100 nm Sb 2 Te 3 back contact layer are sufficient for high efficiency (>17.5%) Zn x Cd 1−x S/CdTe cells. Moreover, it was found that the cell normalized efficiency linearly decreases with the increasing operating temperature at the temperature gradient of −0.25%/°C.
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