Abstract
The breakdown behavior of high‐voltage diodes prepared from silicon wafers that were cut parallel to the rod axis was observed by means of the infrared breakdown radiation. The breakdown patterns were striated and could be correlated to spreading resistance measurements on a microscopic scale. It could be confirmed experimentally that the breakdown in material with resistivity variations not only depends on the absolute resistivity value at each location, but also to a large extent on the wave form and the period of the variations. Only in diodes in which the microscopic resistivity variations had high amplitudes and a distinct periodicity with wavelengths longer than the extent of the space charge region did individual minima lead to individual clearly separated breakdown lines.
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