Abstract
In this study, the blue InGaN LEDs, employing gradual wide wells and thin barriers, is proposed. The carrier distribution, hole injection efficiency, electron leakage, radiative recombination rates, and Auger recombination rates are investigated numerically. The simulation results show that the newly designed LEDs have better performance over its conventional counterpart due to the successful enhancement of hole injection efficiency and suppression of Auger recombination. The simulation results also suggest that under relatively high current injection, the internal quantum efficiency (IQE), efficiency droop and light output power are markedly improved.
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