Abstract
In this study, investigation on Au/Ti/Al ohmic contact to n-type 4H–SiC and its thermal stability are reported. Specific contact resistances (SCRs) in the range of 10 −4–10 −6 Ω cm 2, and the best SCR as low as 2.8 × 10 −6 Ω cm 2 has been generally achieved after rapid thermal annealing in Ar for 5 min at 800 °C and above. About 1–2 order(s) of magnitude improvement in SCR as compared to those Al/Ti series ohmic systems in n-SiC reported in literature is obtained. XRD analysis shows that the low resistance contact would be attributed to the formation of titanium silicides (TiSi 2 and TiSi) and Ti 3SiC 2 at the metal/n-SiC interface after thermal annealing. The Au/Ti/Al ohmic contact is thermally stable during thermal aging treatment in Ar at temperature in the 100–500 °C range for 20 h.
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