Abstract
HfO 2 films were grown by atomic vapour deposition (AVD) on SiO 2/Si (1 0 0) substrates. The positive shift of the flat band voltage of the HfO 2 based metal-oxide-silicon (MOS) devices indicates the presence of negative fixed charges with a density of 5 × 10 12 cm −2. The interface trap charge density of HfO 2/SiO 2 stacks can be reduced to 3 × 10 11 eV −1 cm −2 near mid gap, by forming gas annealing. The extracted work function of 4.7 eV preferred the use of TiN as metal gate for PMOS transistors. TiN/HfO 2/SiO 2 gate stacks were integrated into gate-last-formed MOSFET structures. The extracted maximum effective mobility of HfO 2 based PMOS transistors is 56 cm 2/Vs.
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