Abstract
The surface potential on n-type Si(111)-7 × 7 surface was measured at 78 K using high-frequency heterodyne-Kelvin probe force microscopy (HF-he-KPFM) method with atomic resolution. By comparing VCPD images obtained from conventional KPFM and HF-he-KPFM, we found that frequency dependence of carrier emission and capture of surface states on Si(111)-7 × 7 surface. Furthermore, donor- and accepter-like surface states on different atom position of Si(111)-7 × 7 surface are distinguished. In addition, the electric field effect of high-low Kelvin probe force spectroscopy (KPFS) was analyzed, and the dissipative force was revealed in the high-frequency KPFS. These findings underscore the potential of HF-he-KPFM as a promising method for studying semiconductor properties such as surface potential, band bending and capacitance.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
