Abstract
The phenomenon of bistability in resonant tunneling devices is discussed. The influence of charge build-up in the quantum well on the current-voltage characteristic is considered. It is shown that this build-up can be considerably enhanced by using a thin emitter barrier and a thick collector barrier and lead to current bistability via an electrostatic feedback process. The experimental I( V) characteristic is interpreted with the aid of data on magnetoquantum oscillation over a wide range of fields and voltage baises.
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