Abstract
AbstractZinc oxide (ZnO) thin film was grown on semi‐insulating Si substrate using arsine (AsH3) as precursor by atmospheric‐pressure metal‐organic chemical vapor deposition (AP‐MOCVD). In recently reported results, the physical mechanisms for As‐doped ZnO thin films are explained as As substitution for oxygen (AsO) or As substitution for Zn and As combined with two Zn vacancies (AsZn–2VZn). In this study, we control the in situ annealing ambient into two environments with various temperatures, which are Zn‐rich, using diethylzinc (DEZn) as ambient gas, and O‐rich, using water vapor as ambient gas, respectively. This should help to create AsO and AsZn–2VZn. The ZnO thin film after in situ thermal annealing with H2O vapor ambient at 550 and 750 °C show p‐type conductivity with hole concentration of 2.651 × 1017 and 1.782 × 1018 cm−3, Hall mobilities of 10.08 and 5.402 cm2/V s, and resistivities of 2.368 and 0.6485 Ω cm, respectively.
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