Abstract
In this report, we have studied resistive switching (RS) dynamics in the microwave-assisted magnetite (Fe3O4) based memristive device by having Platinum (Pt) and Fluorine-doped-Tin-Oxide (FTO) as metal electrodes. Fe3O4 insulating layer film has been examined by using X-ray diffraction (XRD), energy dispersive X-ray (EDX), and field emission scanning electron microscopy (FESEM), respectively, for crystal structure, elemental composition, and surface microstructure. The electrical response of the fabricated memristive device has been observed by using Keithley-4200 parameter analyzer with −0.4 V/+0.4 V and −0.8 V/+0.8 V DC sweeping voltage at room temperature. The fabricated device has shown analog resistive switching (ARS); therefore potentiation/depression behavior of the device has been observed by applying multiple positive and negative pulses for evaluation of its synaptic performance.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.