Abstract
To investigate the details of the ion beam induced mixing and validate the Auger electron spectroscopy depth profiling technique, sputter-deposited Si 40 nm/Cr 40 nm multilayer samples were irradiated with a 20 keV CF 4 + ion beam. Due to the ion bombardment the top Si layer was damaged and a crater was created. Elemental depth profiles and layer thicknesses together with surface topography were measured with Rutherford backscattering spectrometry by applying a focussed 2 MeV He + beam. The thickness of the top Si layer was also determined from ellipsometry measurements. The results are compared to that of obtained from Auger electron spectroscopy depth profiling.
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