Abstract
Alumina thin films as hydrogen barrier layer for FeRAM were prepared by rf magnetron sputtering method using a ceramics target and then investigated. RF power, sputtering pressure, oxygen partial pressure and so on were varied as experimental conditions. Fundamental properties of alumina thin films such as refractive index were primarily investigated. Highly oxidized films can be obtained under the condition with oxygen as a sputtering gas. Ferroelectric capacitors coated by alumina films were annealed in forming gas and also characterized in term of ferroelectric properties. Pt/PZT/Pt/Ti/SiO 2 /Si structured capacitor coated with highly oxidized alumina represented good ferroelectric properties even after the forming gas annealing.
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