Abstract
ABSTRACT After thorough optical characterization of the indium-tin-oxide (ITO)-plasmonic material, a V-shaped ITO based highly efficient electro-absorption modulator (EAM) is designed, simulated, and proposed with 220 nm and 350 nm waveguide height to meet the explosive demand for miniature photonic integrated circuits (PICs) and high-speed optical communication systems. Comsol Multiphysics based rigorous finite-element-method (FEM) is used for optimizing the geometrical structure of the EAMs, i.e. V-shape and various dimensions for 1550 nm operating wavelength supporting single-mode transverse magnetic (TM) polarized light. The simulated results of the V-shaped ITO-plasmonic material based EAMs show an enhanced performance as compared to most of the contemporary ITO based EAMs regarding insertion loss (IL) ≈0.031 dB/ and 0.025 dB/, extinction ratio (ER) ≈7.02 dB/ and 11.04 dB/, figure-of-merit (FOM) ≈226 and 441, for the EAMs with 220 nm and 350 nm waveguide height, respectively. These results are significant for the fabrication of next-generation photonic integrated circuits.
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