Abstract
This study presents a silicon-based pressure sensor with temperature compensation. The eight piezoresistors were designed on the polycrystalline silicon membrane and constructed by two concentric Wheatstone-bridge circuits to perform two sets of sensors. The sensor in the central circuit measures the membrane deflection caused by the combined effects of pressure and temperature, while the outer one measures only the deflection caused by the working temperature. From this arrangement, it is reliable and accurate to measure the pressure by comparing the output signals from the two concentric Wheatstone-bridge circuits. The optimal positions of the eight piezoresistors were simulated by simulation software ANSYS. The investigated pressure sensor was fabricated by the micro electro-mechanical systems (MEMS) techniques. The measuring performance and an indication of the conventional single Wheatstone-bridge pressure sensor is easily affected under variation of different working temperature and causes a maximum absolute error up to 45.5%, while the double Wheatstone-bridge pressure sensor is able to compensate the error, and reduces it down to 1.13%. The results in this paper demonstrate an effective temperature compensation performance, and have a great performance and stability in the pressure measuring system as well.
Highlights
Pressure sensors have been extensively applied in the automobile industries, environmental monitoring systems, process controls and biomedical fields [1,2,3,4]
The eight piezoresistors were designed on the polycrystalline silicon membrane, see Figure 1, and this design is to find out the best arrangement of the two central and the outer Wheatstone-bridge circuits to compensate the errors
The double Wheatstone-bridge pressure sensor with temperature compensation that proposed in this paper is fabricated by micro-electromechanical systems (MEMS) techniques
Summary
Pressure sensors have been extensively applied in the automobile industries, environmental monitoring systems, process controls and biomedical fields [1,2,3,4]. The pressure sensor was traditionally manufactured by large-scale mechanical devices, while recently the micro-electromechanical systems (MEMS) technologies have the advances and great improvements to fabricate highly-sophisticated micro-sensors with excellent repeatability characteristics and ultra-low-pressure detection capabilities [5,6,7]. The proposed pressure sensor was fabricated by conventional MEMS-based techniques, including low-pressure chemical vapor deposition (LPCVD), light-boron and heavy-boron ion implantation, dry etching, electrochemical etch-stop processing, and anodic bonding. In this investigation, the eight piezoresistors were designed on the polycrystalline silicon membrane, see Figure 1, and this design is to find out the best arrangement of the two central and the outer Wheatstone-bridge circuits to compensate the errors. Ment conditions of the introduced pressure sensor are under the pressures ranging from zero to 150 psi and the temperatures ranging from −10 ̊C to 75 ̊C
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