Abstract
The electrical and optical properties of a double barrier resonant tunnelling device based on n-GaAs/(AlGa)As and incorporating a heavily doped (AlGa)As window layer are described. The window layer is located between the quantum well and the top surface and has a band gap which exceeds the energy of the quantum well photoluminescence. The incorporation of this layer does not impair the electrical properties of the device.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.