Investigation of 6T SOI SRAM Cell Stability Including Quantum and Gate Direct Tunneling Effects by Three-dimensional Device Simulation

Abstract

This paper shows the impacts of the tunneling leakage current and quantum effect on Static Noise Margin (SNM) and soft error phenomenon for 6T type SOI SRAM by direct 3D process and devise simulations. Below 1.0 nm gate oxide thickness, the influence on SRAM SNM cannot be negligible. Soft error calculations for SOI SRAM cell show SOI devices are very strong for α-particle injections, but for heavy-ion injections, soft error might occur easily and both quantum and tunneling leakage current effects should be considered for accurate future scaled SRAM cell simulation.