Abstract
It has been shown that CVD iron from a Fe(CO) 5 precursor deposits selectively on dielectric surfaces over tungsten surfaces. No similar selective CVD mechanism for titanium and aluminium to SiO 2 surfaces was observed. It was established that the selectivity between the tungsten surface and the SiO 2 surface could be enhanced through the oxidation of the tungsten surface. Depositions carried out on oxidised tungsten (WO X ) and SiO 2 substrates showed that iron layers up to 0.5 μm thick with a resistivity of 18 μΩcm can be deposited with excellent selectivity. The selective mechanism is attributed to the electrochemical properties of the tungsten or WO X layer, which prevents the reduction of the iron precursor. Selectivity loss was attributed to defects or impurities adsorbed to the tungsten surface.
Published Version
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