Abstract
The influence of using a buffer sublayer of nanoporous por-Si on the morphological, physical, and structural properties of nanocolumnar InxGa1 –xN structures fabricated by plasma-activated molecular-beam epitaxy on single-crystal Si(111) substrates is shown. Using a set of structural-spectroscopic analytical methods, the electronic structure of the grown heterostructures, morphology, and optical properties are investigated, and the interrelations between them are established. It is shown that the use of a por-Si sublayer makes it possible to attain a more uniform distribution of diameters of InxGa1 –xN nanocolumns and to increase the photoluminescence intensity of the latter.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
