Abstract
The need for both linear and efficient pseudomorphic high electron-mobility transistors (pHEMTs) for modern wireless handsets necessitates a thorough understanding of the origins of intermodulation distortion at the device level. For the first time, the dynamic large-signal internal physical behavior of a pHEMT is examined using a quasi-two-dimensional physical device model. The model accounts fully for device-circuit interaction and is validated experimentally for a two-tone experiment around 5 GHz.
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