Investigation in the role of hydrogen on the properties of diamond films grown using Ar/H 2/CH 4 microwave plasma

Abstract

The transition of diamond grain sizes from micron- to nano- and then to ultranano-size could be observed when hydrogen concentration is being decreased in the Ar/CH 4 plasma. When grown in H 2-rich plasma (H 2 = 99% or 50%), well faceted microcrystalline diamond (MCD) surface with grain sizes of less than 0.1 μm are observed. The surface structure of the diamond film changes to a cauliflower-like geometry with a grain size of around 20 nm for the films grown in 25% H 2-plasma. In the Ar/CH 4 plasma, ultrananocrystalline diamond (UNCD) films are produced with equi-axed geometry with a grain size of 5–10 nm. The H 2-content imposes a more striking effect on the granular structure of diamond films than the substrate temperature. The induction of the grain growth process, either by using H 2-rich plasma or a higher substrate temperature increases the turn-on field in the electron field emission process, which is ascribed to the reduction in the proportion of grain boundaries.