Abstract
Passivation capability of ultrathin Ga2O3 surface layer formed on GaN through ultraviolet/ozone (UV/O3) treatment is assessed with an exploration of conduction in GaN Schottky diode (SD). The physical and chemical features of ultrathin oxide layer are analyzed to examine the crystalline property. The passivation of dislocation-related structures by UV/O3 treatment improves the conduction in GaN SD.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
