Abstract
Auger Electron Spectroscopy (AES) and Electron Energy Loss Spectroscopy (EELS) have been performed in order to investigate the InP(100) surface subjected to ions bombardment. The InP(100) surface is always contaminated by carbon and oxygen revealed by C-KLL and O-KLL AES spectra recorded just after introduction of the sample in the UHV spectrometer chamber. The usually cleaning process of the surface is the bombardment by argon ions. However, even at low energy of ions beam (300 eV) indium clusters and phosphorus vacancies are usually formed on the surface. The aim of our study is to compare the behaviour of the surface when submitted to He+ or H+ ions bombardment. The helium ions accelerated at 500 V voltage and for 45 mn allow removing contaminants but induces damaged and no stoichiometric surface. The proton ions were accelerated at low energy of 500 eV to bombard the InP surface at room temperature. The proton ions broke the In-P chemical bonds to induce the formation of In metal islands. Such a chemical reactivity between hydrogen and phosphorus led to form chemical species such as PH and PH3, which desorbed from the surface. The chemical susceptibly and the small size of H+ advantaged their diffusion into bulk. Since the experimental methods alone were not able to give us with accuracy the disturbed depth of the target by these ions. We associate to the AES and EELS spectroscopies, the TRIM (Transport and Range of Ions in Matter) simulation method in order to show the mechanism of interaction between Ar+, He+ or H+ ions and InP and determine the disturbed depth of the target by argon, helium or proton ions.
Highlights
InP is expected to be a promising material for both high-speed electrical and optoelectronic device application, in large part due to its high mobility
We associate to the Auger Electron Spectroscopy (AES) and Energy Loss Spectroscopy (EELS) spectroscopies, the TRIM (Transport and Range of Ions in Matter) simulation method in order to show the mechanism of interaction between Ar+, He+ or H+ ions and InP and determine the disturbed depth of the target by argon, helium or proton ions
Owing to the analysis techniques such as AES and EELS, we show that the substitute of Ar+ ions by a small tall ions like He+ or H+ to clean the InP(100) surface is not advantageous
Summary
InP is expected to be a promising material for both high-speed electrical and optoelectronic device application, in large part due to its high mobility The most of these applications, metal-InP Schottky structures of good quality is required [1,2,3,4]. The aim of our study is to compare the behaviour of the surface when subjected to He+ or H+ ions comparatively to the Ar+ ions bombardment, which is usually used to clean surfaces. In this interest, we use the spectroscopy methods such as the Auger Electron Spectroscopy (AES) and the Electron Energy Loss Spectroscopy (EELS). Because it is difficult to determine the affected depth of the surface by ions, we combine these analysis techniques with the simulation method TRIM (Transport and Range of Ions in Matter) to determine the affected depth of the InP surface as a function of the ions energy
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
