Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks

Abstract

GaN-based high electron mobility transistors (HEMT) on Si (111) substrates have large potential for applications in the 5G telecommunication field. However, for this potential to be fully realized, all loss mechanisms need to be minimized. It is known that typical metal-organic chemical vapor deposition (MOCVD) processes used to grow the GaN epitaxial layers can cause considerable parasitic conductivity at the interface of the AlN nucleation layer to the high-resistivity Si substrate, leading to reduced gain and power added efficiency in amplifiers. Reducing this parasitic conductivity is hence of utmost importance to render GaN-on-Si a significant contributor to next-generation 5G power amplifier technology. In this work, we employ secondary ion mass spectroscopy, spreading resistance profiling and insertion loss measurements up to 28 GHz using coplanar waveguides fabricated on the epitaxial layer stacks to study the origin and characterize the parasitic conductivity. While a single heat-up process in an AIXTRON G5+ reactor chamber cleaned using Cl2 does not introduce any extra dopants in the Si substrate, the epitaxial growth of (Al,Ga)N-based HEMT buffer layer stacks leads to the diffusion of Al and, to a lower extent, Ga acceptors into the Si substrate. Optimization of the MOCVD process towards lower growth temperatures leads to a strong reduction of density of diffused acceptors. This reduction goes in line with a significant decrease of the insertion loss from 0.45 dB mm−1 to only 0.20 dB mm−1 at a frequency of 28 GHz.