Investigation and Optimization of Ultrathin Buffer Layers Used in Cu/Sn Eutectic Bonding

Abstract

Ultrathin buffer layers (UBLs) with varied thickness ranging from 10 to 100 nm and different materials were used in Cu/Sn eutectic bonding. A Cu/Sn film thinner than $2~\mu \text{m}$ could fully react and became stiff and rough Cu-Sn intermetallic compound layer, which leads to failure bonding. Four kinds of semiconductor compatible materials including Ti, Pd, Co, and Ni were inserted between Cu/Sn to delay interdiffusion prior to eutectic bonding. In addition to symmetric Cu/Sn bonding with UBL, asymmetric Cu/Sn-Cu bonding scheme with 50-nm Ni UBL was demonstrated. With good mechanical properties, bonding quality, and electrical characteristics, the application of submicrometer Cu/Sn wafer-level bonding by assistance of buffering layer gives a promising and flexible platform for future 3-D integration applications.