Abstract
Nanopillar arrays over the photodetector’s surface attribute an enhanced coupling efficiency of incident light due to its various light trapping mechanisms that contribute towards high-resolution optical detection. This paper reports the analytical investigation of the performance of Indium Gallium Arsenide material based hexagonal-shaped nanopillar (NP) array deployed over the 5 um × 5 um detector’s front surface for high photodetection infrared applications. The proposed structure exhibits an optimum 98% overall absorption of the incoming light. High EQE of about 75% and responsivity of 0.93 A/W has been obtained at 1.55 um operating wavelength with a minimum detector’s depletion width of 0.7 um at 1 mw optical input power.
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