Investigation and experiment of high shock packaging technology for High-G MEMS accelerometer

Abstract

High-G MEMS accelerometer (HGMA) has applications in aerospace, explosive and penetrative environments, and so on. Reliable encapsulation is the basis of ensuring the survival and function of the sensor in harsh environments, but complete high-g accelerometer sensor encapsulation models are rarely reported. We use a multiple-degree-of-freedom system and the theory of stress wave interface transfer to design and analyze three different packaging methods for high-g accelerometer sensors. We also determine the best encapsulation method by establishing natural frequency calculation and stress wave transfer models between media. The stress wave reflection ability of patch adhesive is verified with a split Hopkinson pressure bar (SHPB). The results indicate that the unloading efficiency of patch adhesive to the stress wave is up to 95%. The HGMA frequency response is greater than 300 kHz, which was measured by a single Hopkinson rod. The anti-impact performance and the measurement accuracy in the ultra-high overload environment of the high-g acceleration sensor were verified by artillery penetration tests. The results show that the sensor can realize high precision measurements under ultra-high overload environments (the measuring accuracy of the sensor under the impact of 200,000 g is better than 5%).