Abstract
Currently, the use of more efficient materials such as metal-doped porphyrins has led to improved performance of heterojunction cells. In this context, a thin film of Nickel-Octa-ethyl porphyrins (NiOEP) has been deposited onto a silicon substrate to be used in solar cells due to their unique structural and optoelectronic properties. The structural and surface characteristics have been analyzed through XRD and SEM studies. XRD confirmed that NiOEP film has a crystallinity degree of 78%. The capacitance–voltage of NiOEP/n-Si HJSC was investigated, and the built-in voltage and carrier concentration was calculated as 4.38×1021 m−3 and 0.50 V, respectively. Additionally, we utilized techniques such as Norde and Shockley to evaluate our composite’s electronic and optoelectronic properties. J-V characteristics of the investigated diode were examined in dark and illumination conditions of about 100 mW cm−2. NiOEP/n-Si HJSC could represent a promising solution to meet the demand for solar cells.
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