Abstract
Radio-frequency (RF) Magnetron Sputtering was used to deposit thin tungsten di sulfide (WS<sub>2</sub>) films on top of soda lime glass substrates. Deposition temperature of RF magnetron sputtering was varied from room temperature (RT) to 200<sup>o</sup>C with 50<sup>o</sup>C interval to investigate the impact on film characteristics as well as to optimize for suitable application in thin film solar cells. Structural and opto-electronic properties of as-grown films were investigated and analyzed for different growth temperatures. All the WS2 films exhibit granular structure consist of rhombohedral phase with a strong preferential orientation towards (101) crystal plane. Optical bandgaps are ranged from 1.73 eV to 2.3 eV for different growth temperatures. As-grown films show higher carrier concentration with n-type conductivity. Polycrystalline ultra-thin WS<sub>2</sub> film with bandgap of 2.4 eV, carrier concentration of 2.28 X 10<sup>17</sup> cm<sup>-3</sup> and resistivity of 1.52 Ω-cm were successfully achieved at 50<sup>o</sup>C with 50 W RF power that can be employed as window layers in thin film solar cells.
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