Abstract
In this study, GaN-based blue InGaN/GaN light-emitting diodes (LEDs) with different growth rates of the quantum barriers were fabricated and investigated. The LEDs with quantum barriers grown with a higher growth rate exhibit a lower leakage current and less non-radiative recombination centers in the multiple quantum wells (MQWs). Therefore, the LED with a higher barrier growth rate achieves a better light output power by 18.4% at 120 mA, which is attributed to weaker indium fluctuation effect in the QWs. On the other hand, the localized states created by indium fluctuation lead to a higher local carrier density, and Auger recombination in the QWs. Thus, the efficiency droop ratio of the LEDs with a higher barrier growth rate was only 28.6%, which was superior to that with a lower barrier growth rate (39.3%).
Highlights
light-emitting diodes (LEDs) have been used for many applications, such as full-color displays, exterior automotive lighting, traffic lights, indicators, and cell phones
The light output powers (LOPs), external quantum efficiency (EQE), and normalized EQE of the fabricated LEDs on a linear and log I scale as shown in Figure 1a–c, respectively
The LOP of LED I at 120 mA was enhanced by 5.9% and 18.4% compared with LED II and LED III, Crystals 2019, 9, x FOR PEER REVIEW
Summary
LEDs have been used for many applications, such as full-color displays, exterior automotive lighting, traffic lights, indicators, and cell phones. Some existing mechanisms of the LEDs can still lead to the efficiency droop effect, such as electron overflow loss [1,2,3], lacking in hole injection [4,5], Auger recombination [6,7,8], carrier delocalization [9,10], junction heating [11], and current crowding [12]. We need to further improve the effect of efficiency droop of the LEDs. In our study, GaN-based InGaN/GaN MQW blue LEDs with different growth rates of the quantum barriers were fabricated. GaN-based InGaN/GaN MQW blue LEDs with different growth rates of the quantum barriers were fabricated It is reported by Keller et al that by using 12 pair. By modulating the growth rates of the quantum barriers, it will be expected that the injection carrier behavior in the MQWs can be improved, the quantum efficiency and efficiency droop of the LEDs were investigated
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