Abstract
Abstract Flat, B-doped, low-stress and non-stress polysilicon (poly-Si) thin films were deposited by low pressure chemical vapor deposition (LPCVD). X-ray diffraction (XRD), combined with atomic force microscopy (AFM) and Raman system, UV-Raman measurements and spectroscopic ellipsometry, was used to study the microstructure, the morphology and optical properties of the films. The results indicate that the surface roughness is related to the grain size and the change in the microstructure. The B-doped poly-Si shows a tensile stress, while the flat poly-Si shows a high compressive stress. The bandgap of the B-doped poly-Si is the narrowest because of its most disordered microstructure.
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