Investigating the effect of position-dependent effective mass on the valence-band electronic states of GaAs/GaAsSb/GaAs parabolic quantum wells modulated by intense laser fields

Abstract

This article has theoretically investigated the valence-band electronic properties of GaAs/GaAsSb/GaAs parabolic quantum well structures. To this end, an analytical expression has been developed to describe the position-dependent effective mass in the GaAsSb parabolic well region as a function of well geometry. Simultaneous effects of a non-resonant high-frequency intense laser field and an applied electric field have been studied using the Finite Element Method within the framework of the effective mass approximation. The laser-dressed confinement potential profile, bound states, and the corresponding wave functions have been examined as a function of geometric and structural parameters of GaAsSb well. The obtained numerical findings have shown that the well geometry was modulated to achieve a Gaussian-like profile from a parabolic shape and a double-well structure from a single-well one under intense laser irradiations. Simultaneous effects of intense laser and electric fields have indicated the formation of asymmetric geometric profiles from symmetric quantum well structures. The analysis of valence-band energy states has revealed pronounced blueshifts and redshifts in the electromagnetic energy spectrum, increasing the strength of the intense laser and applied electric fields. Studies have demonstrated that the valence-band electronic features were adjusted to alter the well half-width and the antimony concentration. These tunable valence-band-based properties can be profitable in designing and applying new devices operating in the optoelectronic field.