Investigating the Effect of Plasma Parameters on the Dielectric Constant of Sicoh Thin Films Grown by PECVD Using Dimethyldimethoxysilane

Abstract

The demand for high-performance, low-power, and high-density semiconductor devices has led to the reduction in size of semiconductor chips, resulting in resistance-capacitance (RC) delay. To mitigate the RC delay, low dielectric constant (low-k) insulators have been developed, with the focus on developing new materials with lower dielectric constant. In this report, we present our investigation into the effect of electron density and temperature on the reduction of dielectric constant in SiCOH thin films, utilizing dimethyldimethoxysilane (DMDMS) as a variable with respect to pressure. Our results reveal that both electron density and temperature decline with increasing pressure due to localized electron kinetics and increased inelastic collisions between electrons and neutral species in the chamber, respectively. Our findings also show that the dielectric constant and refractive index of SiCOH thin films decrease at low electron density and temperature. Quadrupole mass spectroscopy reveals that CH3 radicals dissociate less at higher pressures, while Fourier transform infrared spectroscopy confirms an increase in Si-CH3 bonds in SiCOH thin films with increasing pressure. Our findings provide insights into the relationship between electron density and temperature and the dielectric constant of SiCOH thin films, which can contribute to the development of low-k insulators for high-performance semiconductor devices for applications such as big data, mobility, and the Internet of Things (IoT).