Abstract
According to the magnetoresistance (MR) experiments in the Co/Al2O3/Alq3/LSMO device, we investigate spin injection and MR of this organic device. Taking into account the spin-related resistance and partial voltage of the Al2O3 buffer layer, we obtain an apparent adjustable MR of the organic device. A large MR is predicated with an optimized buffer layer thickness. In addition, the effects of different buffer layer materials on the MR are discussed to give a suggestion on experimental investigations.
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