Investigating Si (100) surface patterns as well as electrical states through integrating molecular dynamics simulations with density functional tight binding at atomic level

Abstract

The present work performs molecular dynamics simulations within model potential’s framework to investigate surface atoms’ rearrangements, loading states, and stress distribution in Si (100) surface on heating, and then single point energy calculations for the obtained atomic packing structures of Si substrates are used to obtain electrical information through self-consistent charge density functional tight binding approach. From analysis of Lode-Nadai parameters, atomic stress, visually packing images, Mulliken charges of atoms, Mulliken electron populations on atomic orbitals, differential charge densities, and chemical potentials for substrates, the knowledge of surface patterns, micro-loading states on the atoms and electrical states are obtained. The simulation results show the positions of vacancies have a significant impact on the rearrangements of the surface atoms. The appropriate selection of vacancy positions could be helpful in designing patterns of Si (100) surface. The vacancies in the subsurface or deeper atomic layers present migrations, where the migrations are more likely to occur at higher temperatures. There are stress concentration area and apparent charge transfers for the atoms forming dimers and neighboring atoms around the vacancies, and the differential charge densities in the surface atoms also present significant differences. These substrates with different surface patterns have different chemical potentials.