Abstract
The Magneto Resistance (MR) is investigated in magnetic impurity-doped Zigzag Silicene Nano-Ribbons (ZSiNR) through Density Functional Theory (DFT) and Non-Equilibrium Green's Functions (NEGF) formalism using different spin configurations (Ferromagnetic (FM) and Antiferromagnetic (AFM)) in electrodes. The MR is calculated, and results show a GMR of about 2 × 104% at 0.01V bias voltage for up-spin electrons in Co@ZSiNR structure and a total GMR of 2.6 × 104% at 0.02V, which makes the proposed structures as possible candidates in spintronic device applications. The structures are modified by adding the impurities to the electrodes region, and removing the Hydrogen passivation. The GMR effect is investigated in these structures with different widths, which improves GMR ratios in certain widths.
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