Abstract
The vapor–solid mechanism of 1D SiC nanostructure growth is examined. The chemical vapor deposition parameters were controlled to estimate their effects on SiC nanowhisker (NW) growth and cross-sectional microimages of the NWs were examined to identify the key factors which induce the initial NW growth. According to our careful investigation, we propose that noncatalytic NW growth is a kinetic driven process that occurs when a high density of small critically sized islands exist, which corresponds to the case of a low deposition rate and high surface diffusion.
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