Inverted-Type InAlAs/InAs High-Electron-Mobility Transistor with Liquid Phase Oxidized InAlAs as Gate Insulator.

Yuan-Ming Chen,Kuan-Wei Lee,Yeong-Her Wang,Hsien-Cheng Lin

doi:10.3390/ma14040970

Yuan-Ming Chen, Kuan-Wei Lee + Show 2 more

Open Access

https://doi.org/10.3390/ma14040970

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Journal: Materials	Publication Date: Feb 18, 2021
Citations: 1	License type: CC BY 4.0

Affiliation: National Cheng Kung University, I-Shou University

Abstract

An inverted-type InAlAs/InAs metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with liquid phase oxidized (LPO) InAlAs as the gate insulator is demonstrated. A thin InAs layer is inserted in the sub-channel layers of InGaAs to enhance the device performance. The proposed inverted-type InAlAs/InAs MOS-HEMT exhibits an improved maximum drain current density, higher transconductance, lower leakage current density, suppressed noise figures, and enhanced associated gain compared to the conventional Schottky-gate HEMT. Employing LPO to generate MOS structure improves the surface states and enhances the energy barrier. These results reveal that the proposed inverted-type InAlAs/InAs MOS-HEMT can provide an alternative option for device applications.

Highlights

The conventional Si-based field effect transistors are reaching the scaling limit in logic devices [1]
To achieve low noise figures in future radio frequency (RF) applications, InP-based high-electron-mobility transistors (HEMTs) with InGaAs channels have demonstrated very high levels of performance and have been widely used in circuits operating in the microwave range [2,3]
InAlAs film was oxidized using liquid phase oxidized (LPO) as the gate insulator to fabricate an inverted-type InAlAs/InAs metal-oxidesemiconductor high-electron-mobility transistor (MOS-HEMT), where a thin InAs layer was inserted within the InGaAs sub-channel layers to improve the device performance

Summary

Introduction

The conventional Si-based field effect transistors are reaching the scaling limit in logic devices [1]. Matsumura et al [5] reported that inserting an InAs monolayer within the channel of an AlGaAs/InGaAs HEMT resulted in a 15% improvement in mobility compared to a channel without an InAs monolayer at room temperature. Reported that using a thin InAs channel in InAlAs/InAs modulation-doped field-effect transistor (MODFET) resulted in low output conductance and a high breakdown voltage. Akazaki et al [10] reported that the inverted-type HEMT with an InGaAs/InAs/InGaAs channel structure exhibits only a small kink effect and has higher breakdown voltage. InAlAs film was oxidized using LPO as the gate insulator to fabricate an inverted-type InAlAs/InAs metal-oxidesemiconductor high-electron-mobility transistor (MOS-HEMT), where a thin InAs layer was inserted within the InGaAs sub-channel layers to improve the device performance

Experimental

Results and Discussion

Conclusions