Abstract
In today’s rapid development of multiphase organic photodetectors(OPDs), research on inverted ternary OPDs is very necessary. Therefore, this paper innovatively proposes an inverted ternary organic photodetector(OPD) with a structure of ITO/PEIE/PC $$_{61}$$ BM/P3HT: PCPDTBT/MoO $$_{3}$$ /Al. And the PEIE electron transport layer(ETL), which is essential for the inverted structure, is used to study the effects of different thicknesses. Different thicknesses of PEIE have different effects on the photoelectric characteristics of the device. For the photodetector spin-coated with 0.15wt% PEIE solution, the photodetector shows resistance characteristics. For the photodetector spin-coated with 0.40wt% PEIE solution, the photodetector shows the characteristics of the photodiode. For the photodetector spin-coated with 0.45wt% PEIE solution, the photodetector shows the characteristics of a photomultiplier diode. The underlying mechanism is that different thicknesses of PEIE have different energy levels for ITO, and different cathode energy levels have huge differences in the working mechanism of the device.
Highlights
In recent years, OPD has gradually become a research hotspot, because it has the detection efficiency comparable to that of inorganic photodetectors, and has the advantages of flexibility, diverse material choices, and simple manufacturing processes [1] [2] [3]
This paper proposes an inverted ternary organic photodetector (OPD),whose structure is indium tin oxide (ITO)/PEIE/PC61BM/P3HT:PCPDTBT/MoO3/Al
In order to prepare inverted OPDs, this article focuses on the study of the effects of PEIE films of different thicknesses spin-coated with different mass ratios of PEIE solutions on the properties of OPDs
Summary
OPD has gradually become a research hotspot, because it has the detection efficiency comparable to that of inorganic photodetectors, and has the advantages of flexibility, diverse material choices, and simple manufacturing processes [1] [2] [3]. In order to solve the problem of low trap utilization in the case of high concentration single doping, this research group proposed the use of double doping C60 and C70 to improve the trap utilization, and achieve 8 times the external quantum efficiency from 1067.48% to 8510.17% growth [10]. the external quantum efficiency of the device can be significantly improved by doping traps in the active layer, there will be a phenomenon of doping gathered when doped with higher concentrations of doping, resulting in a reduction in the number of traps It severely limits the practical application of trap-doped organic photomultiplier detectors. In order to take into account the reduction of dark current and the increase of photocurrent, a composite structure of layered heterojunction and bulk heterojunction is adopted
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