Abstract
For the first time Inverted ternary bulk hetrojunction hybrid photovoltaic device based on AgInSe 2 - polymer blend as absorber and P E DOT:PSS as hole transport layer was fabricated and characterized. B lends of MDMO PVV.PCBM.AIS ( MDMO PVV - Poly(2 - methoxy - 5 - (3 ' ,7 ' - dimethyloctyloxy) - 1,4 - phenylenevinylene), PCBM - (Phenyl - C61 - butyric acid methyl ester), AIS - AgInSe 2 ) used as absorber layer. Bulk hetrojuction hybrid Pho tovoltaic device Ag/PEDOT:PSS /MD PVV.PCBM.AIS/ZnO/ITO was fabricated and tested with standard solar simulator and device characterization system as inverted cell configuration . The best performance and photovoltaic parameters, we obtained was an open - circuit voltage of about V oc 0.24 V and a photocurrent of J sc 0.56 J SC (mA/cm 2 ), 28.4 (%) FF and an efficiency of 0.038 percent using a white light illumination intensity of 100mW / cm 2 . Further improvement efforts for better performance are on the way. Successful fabrication and working of this inverted device suggest further optimizations like spinning rate/thickness/solvents/depositions rates for active layers and proceeding f urther in light of knowledge of recombination studies and molecular modeling of AIS nanopowder with this organic system for better performance of a bulk hetrojunction hybrid solar cell.
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