Inverted OLED with Low Resistance IZO–Ag–IZO Top Anode Prepared by Linear FTS System at Room Temperature

Abstract

We fabricated inverted organic light-emitting diodes (IOLEDs) utilizing a very low resistance indium zinc oxide (IZO)/Ag/IZO multilayer grown by the linear facing target sputtering (LFTS) technique as the top anode layer. By inserting a Ag layer between the IZO layers, it was possible to obtain an IZO-Ag-IZO top anode with a very low resistance of 4.15 Ω/? and a high transparency of 87.04% as well as a high work function of 5.75 eV for the IOLEDs by a room-temperature sputtering process. The IZO-Ag-IZO top anode was deposited on organic layers without inducing any sputtering damage or leakage current in the IOLED due to the effective confinement of the high density plasma between the IZO targets. Furthermore, the current density-voltage-luminescence properties of the IOLED with the LFTS-grown IZO-Ag-IZO top anode were better than those of an IOLED with an amorphous IZO single electrode due to the existence of the Ag layer, which remarkably decreases the resistivity and increases the optical transmittance by its antireflection effect.