Abstract
The structural properties of a-plane AlGaN/GaN multiple quantum wells grown on the r-plane sapphire substrate have been characterized. The pentagonal and inverted octagonal surface pits, consisting of several non-polar and semi-polar crystalline facets, are clearly observed and distinguished. The Al incorporation efficiency of the non-polar and semi-polar facets of these special inverted octagonal surface pits has been verified in the order of (112) < (10) < (100) ≈ (110) < (201) by cathodoluminescence measurements at room temperature. The evolution of these inverted octagonal surface pits could be due to the results of interaction between different stacking faults.
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