Abstract
The submicrometer inverted-gate GaAs FET (INGFET), which has its gate on the lower plane of the active layer, is simulated using a two-dimensional computer model with energy-dependent parameters. This device possesses equal input and output reactances, which removes the restriction on the transistor width and greatly reduces the parasitic gate resistance. The characteristics of the INGFET are compared with those of the corresponding conventional coplanar MESFET. The INGFET has a higher current-gain cutoff frequency. A traveling Gunn domain is observed for certain bias combinations. Techniques to suppress this domain are discussed. Another novel inverted-gate structure using a space-charge-injection mechanism is simulated, showing the highest transconductance among all the devices studied here. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
