Abstract
We have studied the electron spin resonance (ESR) of a 0.59 carat synthetic diamond single crystal at room temperature. The crystal was grown on a “split-sphere” apparatus in the Fe-Ni-C system by the temperature gradient method. After high-temperature/high-pressure treatment of the diamond, it was observed that as the microwave power supplied to the sample increased from 70 μW to 70 mW in an H102 cavity, the ESR signal from the P1 center (a nitrogen atom substituting for carbon at a lattice point of the diamond crystal: C-form nitrogen) is inverted. In the original diamond (before high-temperature/high-pressure treatment), no inversion of the ESR signal was observed.
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