Abstract
A methodology for obtaining high‐resolution crystal structure potential distributions from electron microscope images of defects is examined using image simulation methods. The technique is based on the inversion of the multislice procedure when extended to nonperiodic potentials. The sensitivity of the method to the defect model and position in the crystal is examined briefly with the preliminary conclusion that this should not severely limit the applicability of the method. The major impediment for the successful experimental application of the method to the detection and structure determination of single, isolated self‐interstitial defects in silicon is likely to be the preparation and fixation of the surfaces of the specimen.
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