Abstract
ZnSe:In and (ZnSe:In):Zn single crystals obtained by the method of free growth were studied. Inversion of the conductivity type was attained by annealing crystals in an atmosphere of saturated selenium vapors. Hole conductivity was attained for the first time in (ZnSe:In):Zn crystals with an initially high electron conductivity (3–5 Ω−1 cm−1). The origin of donor and acceptor centers responsible for the conductivity of crystals was ascertained.
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