Abstract
In this study, we present an inversion-mode InGaAs FinFETs with transition frequency (f T) = 263 GHz and maximum oscillation frequency (f max) = 70 GHz. In addition, peak transconductance (g m) = 1976 (μS μm−1) and drain-induced barrier lowering (DIBL) = 88 (mV V−1) were also measured at V ds = 0.5 V; subthreshold swing (SS) = 77 and 83 (mV dec−1) was obtained at V ds = 0.05 and 0.5 V, respectively. Immunity to short-channel effects and superior transfer characteristics are attributed to the gate controllability of the fin structure. This work demonstrates the capability of inversion-mode InGaAs FinFETs in the realm of high-frequency applications.
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