Inversion layer mobility of MOSFET's fabricated with NMOS Submicrometer technology

Abstract

In this letter results are presented on the inversion layer mobility of our NMOS devices fabricated with fine-line technology. These devices do not follow the universal mobility curve reported for standard MOS technologies with design rules ≥ 2.5 µm. Annealing of these devices (fabricated with the fine-line technology) in H 2 at 700°C results in an improvement of mobility for all measured values of the vertical electric field. However, even after 700°C annealing, the devices do not follow the universal mobility curve. The universal mobility curve can not be applied to fine-line devices with thin gate oxides and with surfaces that have been exposed to reactive sputter etching processes.