Abstract
Transmission electron microscopy has been used to investigate the (1100) and (1103) inversion domain boundaries in a ZnO film prepared by molecular beam epitaxy. The inversion domain was revealed by dark-field images and confirmed by convergent-beam electron diffraction. Interacting with a (0002) stacking fault, the inversion domain boundary in the (1100) plane alters its orientation from the [0001] direction and climbs on the (1103) plane to release the strain energy. These features are characterized and analysed by high-resolution electron microscopy and the geometric phase method. The findings are significant for understanding the formation and propagation of inverse domain boundaries in epitaxial ZnO films.
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