Abstract
Abstract High-resolution transmission electron microscopy (HRTEM), multislice image simulation and multiple dark field TEM imaging techniques have been used to investigate the structure of extended defects in AlN and GaN thin films grown on (0001) α-Al2O3 by metal-organic chemical vapor deposition (MOCVD). AlN layers were grown directly on the (0001) sapphire. In the case of GaN thin films, 300-500 Å AlN buffer was deposited first. Cross-sectional TEM revealed the presence of domain boundaries in these Ill-nitride films. In this study we investigated these defects by multiple dark field imaging technique and proved some of them to be IDBs lying in planes. The multiple dark field images of several adjacent domains of AlN film are shown in Fig. 1 (a, b). The images were obtained exactly in [110] zone of AlN using (0002) and (000) reflections.
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