Inverse-photoemission study of the conduction bands in amorphous GeSe2.

Abstract

The unoccupied electronic structure of amorphous ${\mathrm{GeSe}}_{2}$ has been investigated by means of inverse-photoemission spectroscopy. We have found prominent peaks at 2.1 and 4.7 eV above the Fermi level, and another weak and broad peak at about 8 eV. The energy positions of these peaks are consistent with those of the calculated density of states of conduction bands and those expected from the imaginary part of dielectric function obtained by the optical reflectance measurement. By comparison with the Ge 2p,3d, and Se 3d core-absorption spectra, the first and second peaks are assigned to the antibonding states of the Ge-Se covalent bonds, and the third peak corresponds to the 4d and/or 5s states of both the Ge and Se atoms.